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Authors
Yamaoka, Hiroki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Yamashita, Takuya Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Harada, Akinori Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Sakaguchi, Atsushi Department of Information and Electronics, Graduate School of Engineering, Tottori University
Kinoshita, Kentaro Department of Applied Physics, Faculty of Science, Tokyo University of Science KAKEN Search Researchers
Kishida, Satoru Department of Information and Electronics, Graduate School of Engineering, Tottori University KAKEN Search Researchers
Hayase, Shuichi Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University Tottori University Researchers KAKEN Search Researchers
Nokami, Toshiki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University Tottori University Researchers KAKEN Search Researchers
Itoh, Toshiyuki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University Tottori University Researchers KAKEN Search Researchers
Keywords
Ionic liquid
Conducting-bridge random access memory (CB-RAM)
Cu-doped triglyme
Publisher
The Chemical Society of Japan
Content Type
Journal Article
Link
ISSN・ISBN
13480715
NCID
AA12179675
Journal Title
Chemistry letters
Current Journal Title
Chemistry letters
Volume
46
Issue
12
Start Page
1832
End Page
1835
Published Date
2017-10-14
Publisher-DOI
Text Version
Publisher
Rights
© 2017 The Chemical Society of Japan
Citation
Hiroki Yamaoka, Takuya Yamashita, Akinori Harada, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Shuichi Hayase, Toshiki Nokami, and Toshiyuki Itoh. Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt. Chemistry letters, 2017, 46(12), pp.1832-1835. https://doi.org/10.1246/cl.170854
Department
Faculty of Engineering/Graduate School of Engineering
Language
English