フルテキストファイル
著者
Yamaoka Hiroki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Yamashita Takuya Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Harada Akinori Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Sakaguchi Atsushi Department of Information and Electronics, Graduate School of Engineering, Tottori University
Kinoshita Kentaro Department of Applied Physics, Faculty of Science, Tokyo University of Science KAKEN研究者をさがす
Kishida Satoru Department of Information and Electronics, Graduate School of Engineering, Tottori University KAKEN研究者をさがす
Hayase Shuichi Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University 鳥取大学研究者総覧 KAKEN研究者をさがす
Nokami Toshiki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University 鳥取大学研究者総覧 KAKEN研究者をさがす
Itoh Toshiyuki Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University 鳥取大学研究者総覧 KAKEN研究者をさがす
キーワード
Ionic liquid
Conducting-bridge random access memory (CB-RAM)
Cu-doped triglyme
NDC分類
5類 技術・工学・工業
出版者
The Chemical Society of Japan
資料タイプ
学術雑誌論文
外部リンク
ISSN・ISBN
13480715
書誌ID
AA12179675
掲載誌名
Chemistry letters
最新掲載誌名
Chemistry letters
46
12
開始ページ
1832
終了ページ
1835
発行日
2017-10-14
出版者DOI
著者版フラグ
出版社版
著作権表記
© 2017 The Chemical Society of Japan
掲載情報
Hiroki Yamaoka, Takuya Yamashita, Akinori Harada, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Shuichi Hayase, Toshiki Nokami, and Toshiyuki Itoh. Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt. Chemistry letters, 2017, 46(12), pp.1832-1835. https://doi.org/10.1246/cl.170854
部局名
工学部・工学研究科
言語
英語