| File | |
| Authors |
Yamaoka, Hiroki
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Yamashita, Takuya
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Harada, Akinori
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Sakaguchi, Atsushi
Department of Information and Electronics, Graduate School of Engineering, Tottori University
Kinoshita, Kentaro
Department of Applied Physics, Faculty of Science, Tokyo University of Science
KAKEN
Kishida, Satoru
Department of Information and Electronics, Graduate School of Engineering, Tottori University
KAKEN
Hayase, Shuichi
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University
Researchers DB
KAKEN
Nokami, Toshiki
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University
Researchers DB
KAKEN
Itoh, Toshiyuki
Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University / Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University
Researchers DB
KAKEN
|
| Keywords | Ionic liquid
Conducting-bridge random access memory (CB-RAM)
Cu-doped triglyme
|
| Publisher | The Chemical Society of Japan
|
| Content Type |
Journal Article
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| Link | |
| ISSN | 13480715
|
| NCID | AA12179675
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| Journal Title | Chemistry letters
|
| Current Journal Title |
Chemistry letters
|
| Volume | 46
|
| Issue | 12
|
| Start Page | 1832
|
| End Page | 1835
|
| Published Date | 2017-10-14
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| Publisher-DOI | |
| Text Version |
Publisher
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| Rights | © 2017 The Chemical Society of Japan
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| Citation | Hiroki Yamaoka, Takuya Yamashita, Akinori Harada, Atsushi Sakaguchi, Kentaro Kinoshita, Satoru Kishida, Shuichi Hayase, Toshiki Nokami, and Toshiyuki Itoh. Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt. Chemistry letters, 2017, 46(12), pp.1832-1835. https://doi.org/10.1246/cl.170854
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| Department |
Faculty of Engineering/Graduate School of Engineering
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| Language |
English
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