File
Title Transcription
RF スパッタリング ホウ ニヨル タンタル ハクマク ノ セイセイ
Title Alternative
Preparation of Ta Thin Films by RF Sputtering Method
Authors
Abstract
Ta thin films are prepared by sputtering under various conditions. Ar gas pressure during sputtering is in the range of l×10⁻³~1×10⁻² torr. Either α―Ta(b. C. C.) similar tO a bulk or β―Ta (tetragonal) obtained only on a film is deposited. It appears that α―Ta is formed in a contaminative atomosPhere, while β―Ta is formed in a clean atomosphere. The α or β Ta phase Of the sputtered films is determined by X―ray diffraction pattern or by measuring the specific resistivity. The α―Ta films show the main peak of the (110) plane parallel to the glass substrate and the β―Ta films show the main peak of the(200) plane parallel to the glass substrate. The X―ray oscillation Photographs also show that both the α―Ta and the β―Ta have fibre structures. Specific resistivities of the
α―Ta and the β―Ta are 50~100 μΩ―cm and 180 ~230 μΩ-cm, respectively.
Publisher
鳥取大学工学部
Content Type
Departmental Bulletin Paper
ISSN
0385-8596
NCID
AN00174610
Journal Title
鳥取大学工学部研究報告
Current Journal Title
鳥取大学工学部研究報告
Volume
3
Issue
2
Start Page
90
End Page
98
Published Date
1973-03-20
Text Version
Publisher
Citation
鳥取大学工学部研究報告. 1973, 3(2), 90-98
Department
Faculty of Engineering/Graduate School of Engineering
Language
Japanese