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| Title Transcription | ジョウチャク ニヨル ZnS : キドルイ エレクトロルミネッセンス ハクマク ノ サクセイ
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| Title Alternative | Fabrication of Electroluminesecent Thin Films Doped with Rare-Earth Ions by Evaporation Method
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| Authors | |
| Abstract | The fabrication conditions of the electroluminescent ZnS:TbF₃, ZnS:ErF₃, and ZnS;NdF₃ thin films have been investigated. The effects of pre-heating upon the electroluminescent properties, and the relationship between crucible temperature and deposition rate, have been studied. The optimum fabrication conditions of the strong electroluminescent films have been found to be as fol1ows; crucible temperature for ZnS of 760～780℃, crucible temperature for rare-earth fluorides of 780～820℃, and the deposition rate of 300Å/min. These conditions were independent of the rare-earth ions doped. The EL emission spectra of the films have been related to known energy level schemes of doped rare-earth ions. The external power efficiency of 5×10⁶ have been obtained.
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| Publisher | 鳥取大学工学部
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| Content Type |
Departmental Bulletin Paper
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| ISSN | 0385-8596
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| NCID | AN00174610
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| Journal Title | 鳥取大学工学部研究報告
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| Current Journal Title |
Reports of the Faculty of Engineering, Tottori University
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| Volume | 4
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| Issue | 2
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| Start Page | 152
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| End Page | 157
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| Published Date | 1974-03
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| Text Version |
Publisher
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| Rights | 注があるものを除き、この著作物は日本国著作権法により保護されています。 / This work is protected under Japanese Copyright Law unless otherwise noted.
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| Citation | 鳥取大学工学部研究報告. 1974, 4(2), 152-157
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| Department |
Faculty of Engineering/Graduate School of Engineering
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| Language |
Japanese
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