RFスパッタリング法によるタンタル薄膜の生成

Ta thin films are prepared by sputtering under various conditions. Ar gas pressure during sputtering is in the range of l×10⁻³～1×10⁻² torr. Either α―Ta(b. C. C.) similar tO a bulk or β―Ta (tetragonal) obtained only on a film is deposited. It appears that α―Ta is formed in a contaminative atomosPhere, while β―Ta is formed in a clean atomosphere. The α or β Ta phase Of the sputtered films is determined by X―ray diffraction pattern or by measuring the specific resistivity. The α―Ta films show the main peak of the (110) plane parallel to the glass substrate and the β―Ta films show the main peak of the(200) plane parallel to the glass substrate. The X―ray oscillation Photographs also show that both the α―Ta and the β―Ta have fibre structures. Specific resistivities of the α―Ta and the β―Ta are 50～100 μΩ―cm and 180 ～230 μΩ-cm, respectively.