{"created":"2023-08-02T03:54:37.185357+00:00","id":3456,"links":{},"metadata":{"_buckets":{"deposit":"435b53f7-883a-40b2-8a7b-80c08ae9f6dc"},"_deposit":{"created_by":10,"id":"3456","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"3456"},"status":"published"},"_oai":{"id":"oai:repository.lib.tottori-u.ac.jp:00003456","sets":["1:10","2:14","23:39:706"]},"author_link":["1614","33936","33937","3187","33938","33939"],"item_3_alternative_title_31":{"attribute_name":"タイトル（ヨミ）","attribute_value_mlt":[{"subitem_alternative_title":"RF スパッタリング　ホウ　ニヨル　タンタル　ハクマク　ノ　セイセイ","subitem_alternative_title_language":"ja-Kana"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1973-03-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"98","bibliographicPageStart":"90","bibliographicVolumeNumber":"3","bibliographic_titles":[{"bibliographic_title":"鳥取大学工学部研究報告","bibliographic_titleLang":"ja"},{"bibliographic_title":"Reports of the Faculty of Engineering, Tottori University","bibliographic_titleLang":"en"}]}]},"item_3_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ta thin films are prepared by sputtering under various conditions. Ar gas pressure during sputtering is in the range of l×10⁻³～1×10⁻² torr. Either α―Ta(b. C. C.) similar tO a bulk or β―Ta (tetragonal) obtained only on a film is deposited. It appears that α―Ta is formed in a contaminative atomosPhere, while β―Ta is formed in a clean atomosphere. The α or β Ta phase Of the sputtered films is determined by X―ray diffraction pattern or by measuring the specific resistivity. The α―Ta films show the main peak of the (110) plane parallel to the glass substrate and the β―Ta films show the main peak of the(200) plane parallel to the glass substrate. The X―ray oscillation Photographs also show that both the α―Ta and the β―Ta have fibre structures. Specific resistivities of the α―Ta and the β―Ta are 50～100 μΩ―cm and 180 ～230 μΩ-cm, respectively.","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"鳥取大学工学部"}]},"item_3_relation_16":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"鳥取大学工学部研究報告. 1973, 3(2), 90-98"}]}]},"item_3_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"注があるものを除き、この著作物は日本国著作権法により保護されています。 / This work is protected under Japanese Copyright Law unless otherwise noted."}]},"item_3_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00174610","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03858596","subitem_source_identifier_type":"ISSN"}]},"item_3_text_32":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"電子工学科　Department of Electronics"},{"subitem_text_value":"電子工学科　Department of Electronics"},{"subitem_text_value":"現在神戸大学工学部電気工学科Present adddress, Department of Electrical Engineering, Fuculty of Engineering, Kobe University."},{"subitem_text_value":"電子工学科　Department of Electronics"}]},"item_3_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小林, 洋志"},{"creatorName":"コバヤシ, ヒロシ","creatorNameLang":"ja-Kana"},{"creatorName":"Kobayashi, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1614","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"40029450","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=40029450"}]},{"creatorNames":[{"creatorName":"岸田, 庸子"},{"creatorName":"キシダ, ヨウコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"33936","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"熊谷, 直樹"},{"creatorName":"クマガヤ, ナオキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"33937","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"笹倉, 博"},{"creatorName":"ササクラ, ヒロシ","creatorNameLang":"ja-Kana"},{"creatorName":"Sasakura, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3187","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50032264","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50032264"}]},{"creatorNames":[{"creatorName":"Kishida, Yoko","creatorNameLang":"en"},{"creatorName":"キシダ, ヨウコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"33938","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagaya, Naoki","creatorNameLang":"en"},{"creatorName":"クマガヤ, ナオキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"33939","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2012-02-08"}],"displaytype":"detail","filename":"rfteu3(2)_90.pdf","filesize":[{"value":"650.2 kB"}],"format":"application/pdf","licensefree":"注があるものを除き、この著作物は日本国著作権法により保護されています。 / This work is protected under Japanese Copyright Law unless otherwise noted.","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"rfteu3(2)_90.pdf","url":"https://repository.lib.tottori-u.ac.jp/record/3456/files/rfteu3(2)_90.pdf"},"version_id":"a41d5ce9-79c0-4b51-9dcd-a2018fb8385f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"RFスパッタリング法によるタンタル薄膜の生成","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"RFスパッタリング法によるタンタル薄膜の生成","subitem_title_language":"ja"},{"subitem_title":"Preparation of Ta Thin Films by RF Sputtering Method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"10","path":["14","10","706"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-06-22"},"publish_date":"2018-06-22","publish_status":"0","recid":"3456","relation_version_is_last":true,"title":["RFスパッタリング法によるタンタル薄膜の生成"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-09-27T02:51:28.070749+00:00"}