@article{oai:repository.lib.tottori-u.ac.jp:00007259,
 author = {市野, 邦男 and Ichino, K. and 赤岩, 和明 and Akaiwa, K. and 阿部, 友紀 and Abe, T. and Sahashi, K. and Nanba, N. and Nakashima, T. and Tomita, Y.},
 issue = {8},
 journal = {JOURNAL OF ELECTRONIC MATERIALS, JOURNAL OF ELECTRONIC MATERIALS},
 month = {Aug},
 note = {ZnS-based ZnMgSTe quaternary alloy layers have been grown by molecular beam epitaxy. The bandgap of ZnMgSTe has been estimated from the reflectance spectra, and it was found that it increases with increasing Mg content, while it decreases with increasing Te content. Nitrogen acceptor doping to Zn1−xMgxS1−yTey layers has also been investigated. The layers with Te content y>0.1 were found to be p-type, and the layer with the larger Te content exhibited lower resistivity. From these results, it seems that the ZnMgSTe quaternary alloy with appropriate composition possesses both a wide bandgap and p-type conductivity.},
 pages = {4321--4324},
 title = {Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys},
 volume = {47},
 year = {2018},
 yomi = {イチノ, クニオ and アカイワ, カズアキ and アベ, トモキ}
}