{"created":"2023-08-02T03:58:06.658983+00:00","id":7259,"links":{},"metadata":{"_buckets":{"deposit":"38e400a9-9c69-443b-83aa-d91a8c81a25d"},"_deposit":{"created_by":10,"id":"7259","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"7259"},"status":"published"},"_oai":{"id":"oai:repository.lib.tottori-u.ac.jp:00007259","sets":["1:10","2:12"]},"author_link":["4743","4794","14","26935","26936","26937","26938"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"4324","bibliographicPageStart":"4321","bibliographicVolumeNumber":"47","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF ELECTRONIC MATERIALS"},{"bibliographic_title":"JOURNAL OF ELECTRONIC MATERIALS","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ZnS-based ZnMgSTe quaternary alloy layers have been grown by molecular beam epitaxy. The bandgap of ZnMgSTe has been estimated from the reflectance spectra, and it was found that it increases with increasing Mg content, while it decreases with increasing Te content. Nitrogen acceptor doping to Zn1−xMgxS1−yTey layers has also been investigated. The layers with Te content y>0.1 were found to be p-type, and the layer with the larger Te content exhibited lower resistivity. From these results, it seems that the ZnMgSTe quaternary alloy with appropriate composition possesses both a wide bandgap and p-type conductivity.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1007/s11664-018-6240-7","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_16":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"Ichino K., Sahashi K., Nanba N., et al. Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys. JOURNAL OF ELECTRONIC MATERIALS. 2018. 47(8). 4321-4324. doi:10.1007/s11664-018-6240-7"}]}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1007/s11664-018-6240-7"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1007/s11664-018-6240-7","subitem_relation_type_select":"DOI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03615235","subitem_source_identifier_type":"ISSN"}]},"item_10001_text_26":{"attribute_name":"EISSN","attribute_value_mlt":[{"subitem_text_value":"1543186X"}]},"item_10001_text_33":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"市野, 邦男"},{"creatorName":"イチノ, クニオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ichino, K.","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"赤岩, 和明"},{"creatorName":"アカイワ, カズアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Akaiwa, K.","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"阿部, 友紀"},{"creatorName":"アベ, トモキ","creatorNameLang":"ja-Kana"},{"creatorName":"Abe, T.","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Sahashi, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nanba, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakashima, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tomita, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-03-17"}],"displaytype":"detail","filename":"jem47(8)_4321.pdf","filesize":[{"value":"207.2 kB"}],"format":"application/pdf","licensefree":"This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections.","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"jem47(8)_4321.pdf","url":"https://repository.lib.tottori-u.ac.jp/record/7259/files/jem47(8)_4321.pdf"},"version_id":"0d76a527-7447-47b8-a7b4-64d0b96d254a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ZnMgSTe","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnS","subitem_subject_scheme":"Other"},{"subitem_subject":"p-type","subitem_subject_scheme":"Other"},{"subitem_subject":"wide bandgap","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnMgSTe","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"p-type","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"wide bandgap","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular beam epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article"}]},"item_title":"Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"10","path":["12","10"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-08-19"},"publish_date":"2022-08-19","publish_status":"0","recid":"7259","relation_version_is_last":true,"title":["Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-11-22T01:49:02.692070+00:00"}