{"created":"2023-08-02T03:58:10.073644+00:00","id":7322,"links":{},"metadata":{"_buckets":{"deposit":"ec4ee0d9-6cd1-41af-881f-934a6d5f141f"},"_deposit":{"created_by":10,"id":"7322","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"7322"},"status":"published"},"_oai":{"id":"oai:repository.lib.tottori-u.ac.jp:00007322","sets":["1:10","2:12"]},"author_link":["4743","14","27214","27215","27216"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"1479","bibliographicPageStart":"1476","bibliographicVolumeNumber":"253","bibliographic_titles":[{"bibliographic_title":"PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS"},{"bibliographic_title":"PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ZnS1-xTex epitaxial layers with x ~ 0.06, nearly lattice-matched to GaP substrates, have been grown by molecular beam epitaxy. Direct growth of the layers onto the substrates results in poor crystal quality, showing no sign of coherent growth. This seems to be due to alloy composition deviation at the initial stage of the growth. To avoid the problem, a thin coherent ZnS buffer layer has been inserted at the ZnSTe/GaP interface. With the buffer layers, coherent growth of ZnSTe layers is achieved and the crystal quality has been improved.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssb.201600009","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_16":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"Ichino Kunio, Kashiyama Shota, Nanba Nao, et al. ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2016. 253(8). 1476-1479. doi:10.1002/pssb.201600009"}]}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1002/pssb.201600009"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/pssb.201600009","subitem_relation_type_select":"DOI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the peer reviewed version of the following article: Ichino, K., Kashiyama, S., Nanba, N., Hasegawa, H. and Abe, T. (2016), ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers. Phys. Status Solidi B, 253: 14"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03701972","subitem_source_identifier_type":"ISSN"}]},"item_10001_text_26":{"attribute_name":"EISSN","attribute_value_mlt":[{"subitem_text_value":"15213951"}]},"item_10001_text_33":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Electronics, Tottori University"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"市野, 邦男"},{"creatorName":"イチノ, クニオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ichino, Kunio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4743","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90263483","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=90263483"},{"nameIdentifier":"100000463","nameIdentifierScheme":"研究者総覧鳥取大学","nameIdentifierURI":"http://researchers.adm.tottori-u.ac.jp/html/100000463_ja.html"}]},{"creatorNames":[{"creatorName":"阿部, 友紀"},{"creatorName":"アベ, トモキ","creatorNameLang":"ja-Kana"},{"creatorName":"Abe, Tomoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20294340","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=20294340"},{"nameIdentifier":"100000459","nameIdentifierScheme":"研究者総覧鳥取大学","nameIdentifierURI":"http://researchers.adm.tottori-u.ac.jp/html/100000459_ja.html"}]},{"creatorNames":[{"creatorName":"Kashiyama, Shota","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27214","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nanba, Nao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27215","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hasegawa, Hiroyasu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27216","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-03-17"}],"displaytype":"detail","filename":"pss253(8)_1476.pdf","filesize":[{"value":"8.1 MB"}],"format":"application/pdf","licensefree":"This is the peer reviewed version of the following article: Ichino, K., Kashiyama, S., Nanba, N., Hasegawa, H. and Abe, T. (2016), ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers. Phys. Status Solidi B, 253: 14","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"pss253(8)_1476.pdf","url":"https://repository.lib.tottori-u.ac.jp/record/7322/files/pss253(8)_1476.pdf"},"version_id":"93252112-1ef4-4ada-9fda-20d53634a90f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"buffer layers","subitem_subject_scheme":"Other"},{"subitem_subject":"GaP","subitem_subject_scheme":"Other"},{"subitem_subject":"reciprocal space mapping","subitem_subject_scheme":"Other"},{"subitem_subject":"transmission electron microscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray diffraction","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnS","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnSTe","subitem_subject_scheme":"Other"},{"subitem_subject":"buffer layers","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"GaP","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"reciprocal space mapping","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"transmission electron microscopy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray diffraction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnSTe","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"10","path":["12","10"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-08-19"},"publish_date":"2022-08-19","publish_status":"0","recid":"7322","relation_version_is_last":true,"title":["ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-11-22T01:51:11.102304+00:00"}